Piezoelectricity in Poled Ge-Doped Silica Thin Films (Short Note)

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概要

• 論文の詳細を見る

• This paper presents piezoelectricity in germanium-doped silica (germanosilicate) films produced by poling treatment. The germanosilicate films were prepared on Si substrates by RF magnetron sputtering. The films were poled by electric fields of 2-4 × 10^7V/m at a temperature above 300℃. Before the poling, no piezoelectric response was observed. After the poling, a Opiezoelectric response caused by normal stress T_33 on the film surface appeared. The maximum value of the piezoelecinc constant d_33 of the poled film was larger than d_11 of quartz by 20-30%. Various applications of the piezoelectric Ge:SiO_2 film are expected to emerge. [DOI: 10.1143/JJAP.41.3431]

• 社団法人応用物理学会の論文
• 2002-05-30

著者

• UNO Takehiko

  Kanagawa Inst. Tech.

• Noge Satoru

  Kanagawa Inst. Tech.

• Noge Satoru

  Kanagawa Institute Of Technology

関連論文

• Observation of Stimulated Emission in Short Wavelength Band from Silica-Based Superstructure Films
• Transient Phenomenon of Twin Formation in Quartz Plates
• P1-10 Growth Techniques of Single Crystal Thin Films on SiO_2 Substrates(Poster session 1)
• P1-17 Fundamental Study on Shear Mode Type Solidly Mounted Resonator(Poster session 1)
• Acoustic Wave Devices Using Artificial Twin Quartz Plates
• Piezoelectricity in Poled Ge-Doped Silica Thin Films (Short Note)
• P1-9 Dependence of Physical Properties on Dopants in Superstructure Films(Poster session 1)

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