State-of-the-Art Reactive Pulsed Laser Deposition of Nitrides

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概要

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• In this paper we report on the present status of thin-film nitride compounds (CN, TiN, AlN, SiN, BN, GaN) growth by pulsed laser deposition (PLD). PLD and reactive PLD (RPLD) appear to be very efficient methods for producing high fluxes of atoms, ions, molecules and clusters suitable to achieve the epitaxial growth of thin films. The optimization of various processing parameters, such as laser power density, substrate temperature, type and pressure of reactive gas, repetition rate and laser pulse duration required for the growth of high-quality nitride films is discussed. The main results of laser produced plasma diagnostics are presented. Particular attention is paid to significant contradictory results reported in literature concerning the nitride formation and deposition processes. Problems associated with characterization methods applied for the analysis of the deposited nitride films are also discussed. [DOI: 10.1143/JJAP.41.2163]

• 社団法人応用物理学会の論文
• 2002-04-15

著者

• Perrone A

  Universita' Di Lecce Dipartimento Di Fisica And Istituto Nazionale Fisica Della Materia

• Perrone Alessio

  University Of Lecce And National Nanotechnology Laboratory Of Istituto Nazionale Di Fisica Della Mat

関連論文

• Optical Emission Diagnostic of Laser-Induced Plasma during CNX Film Deposition
• State-of-the-Art Reactive Pulsed Laser Deposition of Nitrides
• Extensive Studies of the Plume Deflection Angle During Laser Ablation of Si Target

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