Simulation of Recrystallization in Phase-Change Recording Materials

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概要

• 論文の詳細を見る

• Simulations of the movement of the crystalline/amorphous boundary during the writing process were performed. The movement of the boundary was traced by drawing arrows representing the crystallization direction and speed. The lines traced by these arrows made a good match with streamlines of crystal growth shown in a transmission electron microscope (TEM) image. We have also introduced the idea of a "recrystallization ring" to explain the mark-formation mechanism by investigating the temperature dependency of the crystallization growth rate. The simulations for GeSbTe and Ag-InSbTe recording materials illustrate the differences in the crystallization mechanisms of these materials. [DOI: 10.1143/JJAP.41.631]

• 社団法人応用物理学会の論文
• 2002-02-15

著者

• Nishi Y

  Information Storage Research Department Hitachi Ltd. Central Research Laboratory

• Terao M

  Information Storage Research Department Hitachi Ltd. Central Research Laboratory

• Kando Hidehiko

  Information Storage Research Department Hitachi Ltd. Central Research Laboratory

• NISHI Yoshiko

  Information Storage Research Department, Hitachi, Ltd., Central Research laboratory

• TERAO Motoyasu

  Information Storage Research Department, Hitachi, Ltd., Central Research laboratory

関連論文

• Analysis of Reproduced Waveform in Phase-Change Single-Beam Overwrite : PHASE CHANGE MEDIA I
• Simulations of Marks Formed on Phase-change, Land/Groove Disks
• Simulation of Recrystallization in Phase-Change Recording Materials
• Many FIR Laser Emissions Pumped by a TEA-C0_2 Laser with Etalon Tuning

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