Comparison of Material Properties of CuInSe_2 Films Produced by Reaction of Metallic Alloys to H_2Se/Ar and Elemental Se Vapour

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概要

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• In this study, CuInSe_2 thin films were produced by the reaction of identical precursors to elemental Se vapour and H_2Se/Ar gas. In order to compare the respective growth processes, the reaction temperature was varied between 300℃ and 600℃, while all other parameters were kept constant. For a given set of experimental parameters, significant differences were observed in terms of crystalline quality and in-depth compositional uniformity. At low selenization temperatures below 400℃, the reaction process was incomplete, irrespective of the selenization process considered. Reaction of precursors to H_2Se/Ar at temperatures above 400℃ (for 40min), produced fully reacted films with uniform and dense surface morphologies and a high degree of in-depth compositional uniformity. Under similar conditions, Se vapour treated samples had nonuniform surface morphologies with an associated relatively large variation in the Cu/In atomic ratio and Se concentration through the depth of the samples. This comparative study identifies the important differences between the two reactive processes and the advantages in using H_2Se/Ar as a chalcogenide source. [DOI: 10.1143/JJAP.41.518]

• 社団法人応用物理学会の論文
• 2002-02-15

著者

• Alberts V.

  Department Of Physics Rand Afrikaans University

関連論文

• Formation of CuInSe_2 Thin Films by H_2Se/Ar Treatment of Thermally Evaporated Metallic Precursors From a Single Crucible
• Material Losses and Compositional Changes in Two-Step Processed CuInSe_2 Thin Films
• Comparison of Material Properties of CuInSe_2 Films Produced by Reaction of Metallic Alloys to H_2Se/Ar and Elemental Se Vapour
• Characterization of Polycrystalline Cu(In,Ga)Se 2 Thin Films Produced by Rapid Thermal Processing

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