Characterization of Polycrystalline Cu(In,Ga)Se 2 Thin Films Produced by Rapid Thermal Processing

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概要

• 論文の詳細を見る

• In this study a simple, tolerant and reproducible process has been developed to produce device quality Cu(In,Ga)Se2 thin films. These films were prepared by the rapid thermal processing (RTP) of thermally evaporated Cu–In–Ga–Se metallic precursors. All precursors used in this study were prepared by a new growth process in which all metals (Cu, In and Ga) were evaporated from one single crucible in a Se atmosphere. In this process, developed at Stuttgart University, the stoichiometry of the precursor films was fixed by the amount of material in the crucible and the substrate temperature was kept constant at 200°C. Various rapid thermal processes were considered to optimize the material properties (adhesion, surface morphologies and uniformity) of the compound films. In the case of relatively slow rapid thermal processes (RTP) which involved various ramping steps, films with poor structural properties (inhomogeneous film morphologies and presence of secondary phases) were obtained. A significant improvement in material properties was obtained in the case of rapid heating (in 10 s from 200°C to 550°C) of samples. However, these films were still characterized by the presence of secondary phases. Optimum material properties (homogeneous and dense films) were obtained when the heating profile followed a root function in the critical temperature range around 300°C. Preliminary solar cell devices were fabricated with conversion efficiencies above 6% (total area).

• 1997-08-15

著者

• Schon J.h.

  Faculty Of Physics University Of Konstanz

• Bucher E.

  Faculty Of Physics University Of Konstanz

• Alberts V.

  Department Of Physics Rand Afrikaans University

• Schock H.

  Institut Fur Physikalische Electronik Pfaffenwaldring 47 Universitat Stuttgart

• Bucher E.

  Faculty of Physics, University of Konstanz, Konstanz, Germany

• Zweigart S.

  Institut für Physikalische Elektronik, Universität Stuttgart, 70565 Stuttgart, Germany

• Alberts V.

  Department of Physics, Rand Afrikaans University, Johannesburg, South Africa

関連論文

• Characterization of Polycrystalline Cu(In, Ga)Se_2 Thin Films Produced by Rapid Thermal Processing
• Structural and Electrical Investigations of the Anion Exchange in Polycrystalline CuIn(S, Se)_2 Thin Films
• Ambipolar Diffusion Length in CuGaSe_2 Thin Films for Solar Cell Applications Measured by Steady-State Photocarrier Grating Technique
• Formation of CuInSe_2 Thin Films by H_2Se/Ar Treatment of Thermally Evaporated Metallic Precursors From a Single Crucible
• Material Losses and Compositional Changes in Two-Step Processed CuInSe_2 Thin Films
• Comparison of Material Properties of CuInSe_2 Films Produced by Reaction of Metallic Alloys to H_2Se/Ar and Elemental Se Vapour
• Characterization of Polycrystalline Cu(In,Ga)Se 2 Thin Films Produced by Rapid Thermal Processing

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