Submicron Via-Hole Filling using Al Low-Pressure Seed Process : Surfaces, Interfaces, and Films
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概要
- 論文の詳細を見る
The submicron via-hole filling using a two-step Al sputtering process which consists of an Al low-pressure seed (ALPS) process and physical vapor deposition (PVD) Al, is described in this paper. The effect of the type of intermetal dielectric (IMD) material used, such as hydrogen silsesquioxane (HSQ), high-density plasma (HDP) oxide, and siloxane silicon-on-glass (SOG), on the via esistance and via-hole filling capability was evaluated and discussed. The Al film behavior after ALPS deposition, preheating, and PVD Al were investigated and it was determined that the out-gassing of moisture from siloxane SOG IMD significantly affects the via resistance and the key-hole formation in the via. A comparison of the via resistances of the Al-plug and W-plug was made. On the basis of the results. Al plugging with IMD materials such as HSQ or HDP oxide is considered to be superior to W plugging because of the lower via resistance and cost.
- 社団法人応用物理学会の論文
- 2001-08-15
著者
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Yun Jong-ho
Memory Research & Development Division Hynix Semiconductor Inc.
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Kim Ku-young
Memory Research & Development Division Hynix Semiconductor Inc.
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Lee Sang-hwa
Memory Research & Development Division Hynix Semiconductor Inc.
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JIN Sung-Gon
Memory Research & Development Division, Hynix Semiconductor Inc.
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YOON Kyoung-Ryul
Memory Research & Development Division, Hynix Semiconductor Inc.
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RYU In-Cheol
Memory Research & Development Division, Hynix Semiconductor Inc.
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PARK Sung-Ki
Memory Research & Development Division, Hynix Semiconductor Inc.
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Ryu In-cheol
Memory Research & Development Division Hynix Semiconductor Inc.
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Park Sung-ki
Memory Research & Development Division Hynix Semiconductor Inc.
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Jin Sung-gon
Memory Research & Development Division Hynix Semiconductor Inc.
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Yoon Kyoung-ryul
Memory Research & Development Division Hynix Semiconductor Inc.
関連論文
- Effect of Post-Treatments on Atomic Layer Deposition of TiN Thin Films Using Tetrakis(dimethylamido)titanium and Ammonia :Surfaces, Interfaces, and Films
- Submicron Via-Hole Filling using Al Low-Pressure Seed Process : Surfaces, Interfaces, and Films