Defect Properties of CuInS_2 Single Crystals Grown by Horizontal Bridgman Method with Controlling S Vapor Pressure : Semiconductors
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概要
- 論文の詳細を見る
We have analyzed the lattice defects of CuInS_2 bulk single crystals prepared by the horizontal Bridgman method with controlling S vapor pressure. The grown crystals have p-type conduction and electrical resistivities of more than 10^3Ω・cm at room temperature. From measurements of the Hall effect, photoluminescence, optical absorption and photoconductivity, the activation energies of acceptors in CuInS_2 crystals are shown to be of 85meV, 115meV and 360meV, which are respectively ascribed to Cu-vacancies. In-vacancies and extrinsic impurities; whereas donors of 35meV activation energy are ascribed to S-vacancies.
- 社団法人応用物理学会の論文
- 2001-08-15
著者
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Takizawa Takeo
Department Of Physics College Of Humanities And Sciences
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Takizawa Takeo
Department Of Physics College Of Humanities & Sciences Nihon University
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Matsushita Hiroaki
Department Of Electrical Engineering Faculty Of Engineering Science University Of Tokyo
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MIHIRA Tomohiro
Department of Physics, College of Humanities and Sciences
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Mihira Tomohiro
Department Of Physics College Of Humanities And Sciences
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