Infusion Processing for Reliable Copper Interconnects

概要

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We have characterized two implementations of a new technique called infusion processing for electromigration (EM) lifetime improvement of copper interconnects fabricated on 300 mm wafers and porous SiOC film (CVD, k=2.6). In the first implementation, silicon and nitrogen were infused into the surface of copper wires before dielectric barrier deposition. In the second implementation, the process time of this same infusion process was increased resulting in silicon nitride (SiN) film deposition. In this case, the SiN film served as the dielectric barrier, replacing the traditional CVD-deposited dielectric barrier film. The EM lifetime for both types of samples increased by roughly an order of magnitude compared to the process of record, which employed a SiCN dielectric barrier. The infusion process had no effect on stress-induced voiding (SIV) or time-dependent dielectric breakdown (TDDB). The infusion process's effect on copper resistivity, line-to-line capacitance and leakage, and via resistance are discussed.
2007-01-29