シリコンウェハ製造のエッチングプロセスにおける化学反応を伴う流れの数値解析

概要

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Abstract When silicon ingots are cut into silicon wafers, work-affected layers are made on surfaces of the wafers. These layers are removed in the chemical etching process. Recently, requested specifications for the flatness of silicon wafers become threatening. Then, numerical analysis of flows around wafers with chemical reactions is very important. Rotating silicon wafers (circular disks) and stationary circular disks are set coaxially with alternation array in the etching bath. Chemical reaction is composed of two stages. The first stage is oxidation with nitric acid, and the second is hydrofluoric acid treatment. Owing to the CFD results, oxidation with nitric acid is active near the tip of rotated circular disks. Secondary flows between rotating and stationary disks are influenced with sizes of stationary disks. The stationary disks with smaller size make secondary flows decrease. Then, the chemical reaction rate of hydrofluoric acid is enhanced with smaller stationary disks and is speeded up near the tip of the wafer.
2006-08-30