HfW_2O_8-MgWO_4擬二元系熱膨張制御材料

概要

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We already reported a new single-phase ceramic material (AI_<2x>(HfMg)_<1-x>) (WO_4)_3 which shows a low thermal expansion of less than ±2ppm/℃ for the mixing ratio x between room temperature and 800℃. If we control the thermal expansion coefficient in a wide range, it is easy to adjust the thermal expansion coefficient to those of other materials. It also becomes possible to apply thermal-expansion-controlled material in various fields, such as electronic, optical and nanoscale devices. In this report, the authors tried to control more widely the thermal expansion coefficient for the ceramic system of the cofired HfW_2O_8 (negative thermal expansion)-MgWO_4 (positive thermal expansion). For all the compositions in this system, (HfMg) (WO_4)_3 was synthesized from HfW_2O_8 and MgWO_4. It was clarified that the HfW_2O_8-MgWO_4 cofired system was divided into the (HfMg) (WO_4)_3-MgWO_4 binary ceramic and the (HfMg) (WO_4)_3-HfW_2O_8 binary ceramic. Finally, those thermal expansion coefficients can be adjusted from -6 to +9 ppm/℃ by changing the compositional ratio of HfW_2O_8 and MgWO_4.
社団法人日本セラミックス協会の論文
2006-10-01