X線の動力学的回折を用いたSi結晶の歪の高感度検出

概要

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A very sensitive method to detect long range strain in otherwise perfect crystalline materials is shown. In this method, a specimen is set vertically in a diffraction apparatus under the symmetrical Laue condition, in which the scattering vector is horizontal. Then, the specimen is rotated along the scattering vector, with the Bragg condition being kept satisfied. Experiments were carried out using Si crystals of 714μm thickness with 0.4 Å wavelength X-rays. The Si crystals were strained by scratching the surface with a glasscutter. A characteristic behavior of the integrated intensities was observed. When the specimens were rotated in the opposite direction the integrated intensities were different and sharply enhanced integrated intensities of the higher order reflections were observed when the specimens were rotated from its initial vertical position. The observed results can be explained using the dynamical theory of X-ray diffraction for distorted crystals, where the specimens were assumed to be bent along an axis lying on the specimen surface. This method is very sensitive to detect minute strains induced by the device fabrication processes. The detection limit in the present specimen is estimated to be equivalent to a uniform bending with a radius of curvature of 7000m.
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