Zinc Oxide : an Attractive Potential substitute for GaN, Applications & Future Prospects(Session 3 Emerging Devices and Technologies I,AWAD2006)

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概要

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• Zinc oxide (ZnO) with a band-gap energy of 3.3 eV has the enormous potential for use in optoelectronic applications. It has both cohesion and exciton stability; the very high exciton binding energy of 60 meV gives it a very high potential for room temperature light emission. To develop such optoelectronic devices, one important issue to be resolved is the fabrication of low-resistivity p-type ZnO. ZnO exhibits an asymmetry in its ability to be doped n-type or p-type. As a solution to the doping problem described above, we have proposed a deliberate co-doping of acceptors with reactive donors. We will discuss how to control the valence electrons to realize a low-resistivity p-type wide-band-gap semiconductor, ZnO.

• 社団法人電子情報通信学会の論文
• 2006-06-26

著者

• Yamamoto Tetsuya

  Materials Design Center Research Institute Kochi University Of Technology

関連論文

• Properties of Transparent Conductive Ga-Doped ZnO Films on Glass, PMMA and COP Substrates
• Zinc Oxide : an Attractive Potential substitute for GaN, Applications & Future Prospects(Session 3 Emerging Devices and Technologies I,AWAD2006)
• Zinc Oxide : an Attractive Potential substitute for GaN, Applications & Future Prospects

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