Band Structure of Clean Si(100)2×1 Surface Disordered System(Condensed matter: structure and mechanical and thermal properties)
スポンサーリンク
概要
- 論文の詳細を見る
The electronic states of the clean Si(100)2×1 surface disordered system are calculated at various temperatures using the Monte Carlo simulation technique. The calculation generates the position of the atoms based on the Ising model and gives numerically the electronic eigenstates based on the tight-binding model on each generated disordered structure. The electronic structure is discussed in terms of the density of states projected to the reciprocal space averaged over those obtained electronic states. The results clarify that the short-range ordering effect is the origin of the behavior found in experiments.
- 社団法人日本物理学会の論文
- 2006-06-15
著者
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YOSHIMORI Akio
Department of Material Physics,Faculty of Engineering Science,Osaka University
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Kaji Hiroko
Department Of Electronic Engineering Okayama University Of Science
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KAKITANI Kiminori
Department of Electronic Engineering, Okayama University of Science
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Kakitani Kiminori
Department Of Electronic Engineering Okayama University Of Science
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Yoshimori Akio
Department Of Computer Simulation Okayama University Of Science
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YOSHIMORI Akio
Department of Electronic Engineering, Okayama University of Science
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KAJI Hiroko
Department of Electronic Engineering, Okayama University of Science
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