Reducing the Disorder/Order Transition Temperature of FePt Film by Using an Ar-Discharge Cleaning Method

概要

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To use L1_0-FePt film with magnetic storage media, it is essential to reduce the thermal annealing temperature so that L1_0 phase can be obtained. By using Ar-discharge cleaning before sputter-deposition of FePt film, with the aim of removing residual gas impurities in a sputtering chamber, especially water vapor, we reduced the temperature at which FePt film begins to change from a disordered phase to an ordered one (L1_0 phase) to 290℃, and the temperature at which the transition is complete to 350℃. These temperatures are lower than the lowest values hitherto obtained by internal baking of a sputtering chamber using preheating of the substrate (with the same aim of removing residual gas impurities). This success will facilitate the practical use of L1_0-FePt film.
2006-03-01