半導体プラズマの発振機構に関する研究 : 特に表面の効果に着目して

概要

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The plasma oscillation caused by the instability of the semiconductor plasma has been thought to originate from its surface condition and contact etc. But these factors have not been verified sufficiently. In this experiment we especially attended to the surface condition and the surface charge. The surface was made rough on one side of the crystal of germanium and smooth on the other side. In this case the threshold voltage of the oscillation increased on the rough surface. This phenomenon is thought to be caused by the loss of the carrier on the surface. On the other hand, the electric field was applied to the both sides of the crystal and the electric charge was induced on the surface and its sign was changed by changing the direction of voltage. In this case the intensity of the oscillation varied according to the sign of the induced charge.
明治大学の論文