SFM-IV Method for Characterizing Sub-Surface Interfaces of Semiconductor Devices(Interfaces by various techniques)

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概要

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• We demonstrate that a novel method of current-voltage (I-V) spectra measurement by scanning force microscopy (SFM) reveals subsurface local electrical characteristics of resonant tunneling diodes (RTDs) on a nanometer scale. Measured SFM I-V spectra of RTDs show negative differential resistance features, and the spatial resolution of this method was found to be 20 nm. Experimental evidence for the quantized nature of an SFM pointcontact was observed for the first time. High spatial resolution of this method was confirmed by a simple calculation for the area of current flow through RTD.scanning force microscopyresonant tunneling diodenegative difference resistancequantized point contactsubsurface

• 東北大学の論文
• 1997-03-31

著者

• Tanimoto Masafumi

  Ntt Science And Core Technology Laboratory Group

関連論文

• SFM-IV Method for Characterizing Sub-Surface Interfaces of Semiconductor Devices(Interfaces by various techniques)

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