Scanning Tunneling Microscopic Observation of the Atomic Structure of GaAs(001) Surface Grown by Metalorganic Vapor Phase Epitaxy(STM-GaAs)

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概要

• 論文の詳細を見る

• We present the first atomically resolved scanning-tunneling micrographs of GaAs(001) surfaces prepared by metalorganic vapor-phase epitaxy (MOVPE). Thin films deposited in an MOVPE reactor were transferred to an ultra high vacuum system without air exposure. After heating the samples from 450 to 620℃, high-quality images of the (2x4)/c(2x8), (1x6)/(2x6) and (4x2)/c(8x2) reconstructions were obtained.MOVPESTMGaAs(001)

• 東北大学の論文
• 1997-03-31

著者

• Han Byung-kwon

  Chemical Engineering Department University Of California

• Li Lian

  Chemical Engineering Department University Of California

• Gan Shupan

  Chemical Engineering Department, University of California

• Qi Haihua

  Chemical Engineering Department, University of California

• Hicks Robert

  Chemical Engineering Department, University of California

• Qi Haihua

  Chemical Engineering Department University Of California

• Gan Shupan

  Chemical Engineering Department University Of California

• Hicks Robert

  Chemical Engineering Department University Of California

関連論文

• Scanning Tunneling Microscopic Observation of the Atomic Structure of GaAs(001) Surface Grown by Metalorganic Vapor Phase Epitaxy(STM-GaAs)
• Effect of Surface Polarity on Gallium Adsorption on 6H-SiC(0001) Surfaces : An STM Study(STM-other surfaces)

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