Change of Kinetic Roughening with Surfactant Hydrogen in Ge on Si(001) System(STM-Si(001))

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概要

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• The growth mode of Ge on a Si(001) substrate can be modified in the presence of dynamically supplied atomic hydrogen as a surfactant. A transition from the 3D to 2D growth was observed in scanning tunneling microscope images as the hydrogen flux increased to 1ML/sec. A layer-by-layer growth was successfully achieved with the hydrogen surfactant up to 8 monolayers of Ge. This growth behavior can be explained by kinetic roughening theory, showing a scaling behavior. The growth and roughness exponents, α and β, seem to decrease with hydrogen. It is believed that hydrogen saturates the dangling bonds and limits diffusion of the incoming Ge, resulting in a formation of large two dimensional islands.silicongermaniumsurfactanthydrogensurface roughening

• 東北大学の論文
• 1997-03-28

著者

• KUK Young

  Department of Physics, Seoul National University

• Kuk Young

  Department Of Physics And Center For Science In Nanometer Scale Seoul National University

• Kahng Se-Jong

  Department of Physics, Seoul National University

• Kahng Se-jong

  Department Of Physics Seoul National University

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