Lattice Location of Si and Al Dissolved in Cr by Proton Channeling and Induced X-ray Emission

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概要

• 論文の詳細を見る

• The lattice location of Si and Al in Cr-2.3 a/o Si and Cr-1.4 a/o Al crystals has been studied by measuring backscattered proton and X-ray emission with the use of 1.8 MeV H^+ incident beam. Both proton and X-ray yields along the principal axial and planar directions show channeling dips, being coincident almost with each other. The result indicates that Si and Al atoms occupy substitutionally the Cr lattice sites.

• 東北大学の論文

著者

• TAKAHASHI J.

  Department of Neurosurgery, National Cardiovascular Center

• Fujino Y.

  Department Of Nuclear Engineering Tohoku University

• Yamaguchi S.

  Department of Nuclear Engineering, Tohoku University

• Ozawa K.

  Japan Atomic Energy Research Institute

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