Chemical Vapour-Deposited Silicon Nitride : Part 2. Density and Formation Mechanism

概要

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Chemical vapour-deposited Si_3N_4 (pyrolytic Si_3N_4) has been prepared from a SiCl_4+NH_3/H_2 System at 1100 to 1500℃ under total pressures of 5 to 300 Torr. The densities of crystalline deposits are 3.15 to 3.18 g cm^<-3>, nearly independent of the deposition conditions. On the other hand, the densities of amorphous deposits depend strongly on the deposition conditions and have a minimum value of 2.60 g cm^<-3> at 1200℃ and 40 Torr. The deposition rate of Py-Si_3N_4 obeys a linear law. The rate of increase in thickness is markedly affected by the deposition conditions, its maximum value being 0.73 mm h^<-1> for crystalline deposits at 1400℃ and 40 Torr, and 0.36 mm h^<-1> for the amorphous deposits at 1300℃ and 40 Torr. The activation energies of formation of Py-Si_3N_4 are 30 to 33 and 53 kcal mol^<-1> for the amorphous and crystalline deposits, respectively. The formation mechanism is also discussed.
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