II-VI半導体ZnOへの窒化物の影響

概要

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Effects of trivalent nitride (A1N or GaN) on electric and crystallographic properties of II-VI semiconductor ZnO ceramics were studied. All ceramics exhibits n type conductivity. Compared with the electric conductivity of ZnO, that of trivalent nitride doped ZnO is very high. Although the doped each cationic element, Al and Ga, diffuses into the ZnO depending on the long time heating, the nitrogen was not detected by the electron microscopy. In X-ray diffraction pattern of each ceramics, the main crystal structure is wurtzite, but extra materials were observed, which is Zn in A1N doped ZnO and spinel (ZnGa_2O_4) in GaN doped ZnO. It is considered that these extra materials give large effects on the electric conductivity of each ceramics.