多結晶シリコン及びゲルマニウムにおける結晶粒界の性質(<特集>電気電子工学)

概要

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The characteristics of grain-boundary in undoped pplycrystalline silicon and germanium were considered with the recent report, in which the intrinsic polycrystalline silicon and germanium have p-type conduction. The p-type conduction can be explained by assuming that the grain-boundary states are able to trap electrons. The negatively charged grain-boundary states form the hole accumulation that forms channels for hole transport. After the hydrogen plasma treatment, the grain-boundary states are terminated and n-type conduction appears. The the grain-boundary states are probably the dangling bonds, because the dangling bond states trap both electrons and holes and are suitable for pur assumption. In the polycrystalline germanium, the grain-boundary states behave as acceptors because they are close to the valence band. The polycrystalline germanium may be applied for electronic devices without the grain-boundary treatment.
2005-03-31