反応性スパッター法による微結晶シリコンゲルマニウム半導体薄膜の作製

概要

論文の詳細を見る
Microcrystalline silicon-germanium (μc-SiGe) films were fabricated on glass substrates by the RF reactive magnetron sputtering method using Ar and H2 mixtures. We could reduce the crystallization temperature to 100°C and obtained the photosensitivity in the μc-SiGe films with any Ge content from 0 to 100%. These results indicate that the H2 introduction into the sputtering gases has two important effects to decrease the crystallization temperature of the μc-SiGe films and to improve the film properties by the hydrogen termination of defects.
日本真空協会の論文
2008-10-20