Domain Switching and Piezoresponse Properties of PZT Thin Films
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概要
- 論文の詳細を見る
Pb (Zr_<0.53>Ti_<0.43>)O_3(PZT) thin films with various preferred crystallographic orientations were deposited on various substrates using pulsed laser deposition techniques. The piezoelectric displacement that involved the bending vibration of the PZT thin film on substrate was observed in randomly oriented PZT thin film, and the piezoelectric displacement of randomly oriented PZT thin film is larger than those of (100) and (111) preferred texture films. This result was discussed by correlation with the number of effective spontaneous polarization axes in the morphotropic phase boundary of the PZT system. Moreover, polarization fatigue was found to lower the electric-field-induced displacement significantly, indicating large contribution of ferroelectric domain motion to the piezoelectric response of PZT thin films under bipolar drive.
- 八戸工業大学の論文
- 2004-02-27
著者
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KAKIMOTO KENICHI
Department of Urology, Osaka Kosei-Nenkin Hospital
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KANEMOTO Hirofumi
Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering
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Kakemoto Hirofumi
Department Of Applied Physics Faculty Of Science Science University Of Tokyo
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Masuda Yoichiro
八戸工業大学
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NOZAKA Takashi
八戸工業大学
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Kakimoto K
Department Of Materials Science And Engineering Nagoya Institute Of Technology
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Kanemoto Hirofumi
Department Of Inorganic Materials Faculty Of Engineering Tokyo Institute Of Technology
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Kakimoto Kenichi
Department of Materials Science and Engineering, Nagoya Institute of Technology
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