放射温度計を用いた6H-SiC上AIN成長のその場観測(<特集>エレクトロニクス(電子工学)特集)

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概要

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• In this article, we present an analysis of the pyrometer signals observed in AIN crystal growth on 6H-SiC taking into account the AIN emissivity. The AIN layers are grown by metal-organic chemical vapor deposition. The pyrometer is sensitive to the initial stage of the crystal growth of AIN as well as the crystal quality and the surface morphology of the substrate 6H-SiC. The analysis is applied to the classification of the electrical properties of the Al/AIN/6H-SiC MIS structure. We find two types of oscillations: these oscillations are out of phase each other due to the difference of the crystal quality of SiC. The different quality of SiC produces the different initial growth of AIN. Consequently, we succeed in obtaining high-insulating AIN.

• 東海大学の論文
• 2004-03-31

著者

• 鈴木 孝宗

  工学研究科電気工学専攻

• 犬島 喬

  電子情報学部エレクトロニクス

関連論文

• 放射温度計を用いた6H-SiC上AIN成長のその場観測(エレクトロニクス(電子工学)特集)
• InNの半導体特性と超伝導特性共存の研究(エレクトロニクス(電子工学)特集)

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