InNの半導体特性と超伝導特性共存の研究(<特集>エレクトロニクス(電子工学)特集)

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概要

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• In this report we present the summary of our recent contributions to the research of the co-existence of superconducting and semiconducting properties of InN grown on sapphire (0001) by the use of MBE and MOCVD methods. The investigated InN has the mobility of 700〜1600 cm^2V^<-1>s^<-1> and the carrier concentrations of 2×10^<18>cm^<-3>〜7×10^<20>cm^<-3>. The samples show clear hexagonal phonon structures and sharp plasma reflections. The InN with the carrier concentration higher than 2×10^<19>cm^<-3> shows clear resistivity anomaly below 3.4 K and becomes type II superconductor at 0.6 K. The observed superconductivity of InN is anisotropic. The Shubnikov-de Haas measurements reveal that the electronic structure of InN is anisotropic and a constant carrier density exists on the a-b plane of hexagonal InN.

• 東海大学の論文
• 2004-03-31

著者

• 犬島 喬

  電子情報学部エレクトロニクス

関連論文

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• InNの半導体特性と超伝導特性共存の研究(エレクトロニクス(電子工学)特集)

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