量子井戸デバイス構造のラマン分光法による評価

概要

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Raman scattering technique is demonstrated to be useful for characterizing the fine structures of semiconductor devices with GaAs/AIGaAs quantum wells. A multiquantum-well (MQW) laser structure with a mesa-shaped active area is examined by microprobe Raman spectroscopy, and the Raman spectra show the difference of Al content between the top and the ramp of the p-AJGaAs mesa on the active area. The difference makes the lateral confinement of the lasing beam advantageous. Two dimensional electron gas in a modulation doped MQW-high electron mobility transistor (HEMT) structure is also examined by Raman spectroscopy. The charge transfer from the doped AlGaAs barriers into undoped GaAs wells is proved spectroscopically by comparing the Raman spectrum of the MQW structure with that of the thick AlGaAs reference layer with the same Al content and doping density as those of barriers.
香川高等専門学校の論文
2004-06-30