Initial Dissolution Rate of Quartz Rods in Silicon Melts : Influence of Quartz Surface Conditions

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概要

• 論文の詳細を見る

• The influence of quartz surface conditions on the quartz dissolution rate in silicon melts has been investigated. As experimental samples with different surface conditions, raw fused amorphous quartz and fused quartz pretreated in silicon melts at 1550°C and 1500°C for 300 min were prepared, respectively. In the case of quartz pretreated in silicon melts at 1550°C, the initial dissolution rate in silicon melts at 1430°C was approximately one-third that of raw fused amorphous quartz or quartz pretreated in silicon melts at 1500°C.

• 社団法人応用物理学会の論文
• 2000-07-01

著者

• Matsumoto Takeshi

  Silicon Melt Advanced Project Shonan Institute Of Technology

• ABE Keisei

  Silicon Melt Advanced Project, Shonan Institute of Technology

• TERASHIMA Kazutaka

  Silicon Melt Advanced Project, Shonan Institute of Technology

• Abe Keisei

  Silicon Melt Advanced Project Shonan Institute Of Technology

• Terashima Kazutaka

  Silicon Melt Advanced Project Shonan Institute Of Technology

関連論文

• Initial Dissolution Rate of Quartz Rods in Silicon Melts : Influence of Quartz Surface Conditions
• Analysis of Deposits Evaporated from Boron-Doped Silicon Melt

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