Analysis of Deposits Evaporated from Boron-Doped Silicon Melt

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概要

• 論文の詳細を見る

• The influence of the addition of boron on weight variation of silicon melt due to ecaporation was investigated. It was found that the evaporation loss ot the 10^<21> atoms/cm^3 boron-doped silicon melt was larger than that of nondoped silicon melt. In particular, it appeared that boron enhanced the weight variation of the silicon melt at high temperature (1550℃) by assisting the evaporation from the melt. Deposits collected by a well designed collector were analyzed by electron probe microanalysis (EPMA) in order to identify the chemical species evaporated from the boron-doped silicon melt. It was found that the predominantly evaporated species from the boron-doped silicon melt was silicon oxide. It could be concluded that addition of boron into the silicon melt enhanced the evaporation of silicon-oxide.

• 社団法人応用物理学会の論文
• 1997-08-01

著者

• Nakanishi Hideo

  Silicon Melt Advanced Project Shonan Institute Of Technology

• Maeda Susumu

  Silicon Melt Advanced Project Shonan Institute Of Technology

• Hoshikawa Keigo

  Silicon Melt Advanced Project Shonan Institute Of Technology:(present Address) The Faculty Of Educat

• Abe Keisei

  Silicon Melt Advanced Project Shonan Institute Of Technology

• Terashima Kazutaka

  Silicon Melt Advanced Project Shonan Institute Of Technology

• MAEDA Susumu

  Silicon Melt Advanced Project, Shonan Institute of Technology

• NAKANISHI Hideo

  Silicon Melt Advanced Project, Shonan Institute of Technology

• Kato Masaki

  Silicon Melt Advanced Project, Shonan Institute of Technology

• HOSHIKAWA Keigo

  Silicon Melt Advanced Project, Shonan Institute of Technology:(Present Address) The Faculty of Education, Shinshu University

関連論文

• Initial Dissolution Rate of Quartz Rods in Silicon Melts : Influence of Quartz Surface Conditions
• Analysis of Deposits Evaporated from Boron-Doped Silicon Melt

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