Vanishing of Resistance and Diamagnetism Observed in a Very Thin Al Film at Room Temperature
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概要
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A very thin Al film(thickness : 160-430Å)was evaporated on a silicon wafer substrate with a SiO_2 film and an arachidic acid Langmuir-Blodgett film. Vanishing of resistance and a repulsive force indicating diamagnetism were observed in the very thin Al film in a magnetic field at room temperature. This repulsive force was measured by an apparatus which can measure small displacements such as lO^<-2> μm with a laser beam.
- 社団法人応用物理学会の論文
- 2000-05-01
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関連論文
- Energy Release and It's Mechanism in Metal/Insulator/Metal Structures with Langmuire-Blodgett Films
- Diamagnetic Property Observed in Langmuir-Blodgett Heterofilm
- Vanishing of Resistance and Diamagnetism Observed in a Very Thin Al Film at Room Temperature