Diamagnetic Property Observed in Langmuir-Blodgett Heterofilm

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概要

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• The Al/Langmuir-Blodgett (LB) heterofilm/Au structure was deposited on a silicon wafer substrate with SiO_2 film. The LB heterofilm was composed of the arachidic acid LB film (nonpolar) and the tetracyanoquinodimethane (TCNQ) compound LB film (polar). A repulsive force indicating the diamagnetic property of the LB heterofilm was observed under a magnetic field at room temperature. The repulsive force was measured using an apparatus which can measure a displacement such as small as 10^<-2> μm by a laser displacement meter.

• 社団法人応用物理学会の論文
• 1999-11-01

著者

• HINO Taro

  Tokyo Institute of Technology

関連論文

• Energy Release and It's Mechanism in Metal/Insulator/Metal Structures with Langmuire-Blodgett Films
• Diamagnetic Property Observed in Langmuir-Blodgett Heterofilm
• Vanishing of Resistance and Diamagnetism Observed in a Very Thin Al Film at Room Temperature

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