GaAs Metal-Semiconductor Field-Effect Transistor with Surface Oxygen Implantation : Semiconductors

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概要

• 論文の詳細を見る

• Oxygen implantation has been employed to form a high-resistance region between the channel and the surface of GaAs metal-semiconductor field-effect transistors (MESFETs). Comparable DC and RF performances were achieved for MESFETs with and without oxygen implants; however, MESFETs with the extra oxygen-implantation demonstrated good breakdown performance, less frequency dispersion of drain current, and good time dependence of drain current at 150℃ in air.

• 社団法人応用物理学会の論文
• 2001-10-15

著者

• HSIN Yue-ming

  Department of Electrical Engineering, National Central University

• Wu Liang-wen

  Department Of Electrical Engineering National Central University

• Hsin Yue-ming

  Department Of Electrical Engineering National Central University

• Hsueh Kuang-po

  Department Of Electrical Engineering National Central University

• Hsu Chia-jen

  Department Of Electrical Engineering National Central University

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