Collector Doping Design for Improving DC and RF Performance in InGaP/GaAs HBTs before Onset of Kirk Effect(Semiconductor Materials and Devices)

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概要

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• A thin high-doping layer was inserted in the uniform doped collector to extend the operational current before current gain and cut-off frequency roll-off. Two times higher collector current before onset of Kirk effect was obtained and the resulted John figure of merit was improved from 846 to 1008 V-GHz.

• 社団法人電子情報通信学会の論文
• 2005-08-01

著者

• Wang Che-ming

  Department Of Electrical Engineering National Central University

• HSUEH Kuang-Po

  Department of Electrical Engineering, National Central University

• HSIN Yue-ming

  Department of Electrical Engineering, National Central University

• Hsin Yue-ming

  Department Of Electrical Engineering National Central University

• Hsueh Kuang-po

  Department Of Electrical Engineering National Central University

• Hsin Yue‐ming

  National Central Univ. Jhongli Twn

関連論文

• Collector Doping Design for Improving DC and RF Performance in InGaP/GaAs HBTs before Onset of Kirk Effect(Semiconductor Materials and Devices)
• Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors : Semiconductors
• A Novel HBT with Composite Collector for Power Amplifier Application
• GaAs Metal-Semiconductor Field-Effect Transistor with Surface Oxygen Implantation : Semiconductors
• Simulation Study of a Novel Collector-up npn InGaP/GaAs Heterojunction Bipolar Transistor with a p-Type Doping Buried Layer for Current Confinement(Semiconductor Materials and Devices)
• Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors

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