Continuous Wave and Q-Switched Mode-Locking of a Nd:YVO_4 Laser with a Single Crystal GaAs Wafer
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概要
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We realized both continuous wave (CW) and Q-switched mode-locking in a diode-pumped Nd:YVO_4 laser by using a single crystal GaAs wafer as the saturable absorber as well as an output coupler. The GaAs wafer was coated to have a continuously variable reflectivity and the laser intensity within the GaAs saturable absorber can be changed by simply translating the GaA wafer. CW mode-locked pulses of I .5 W average power and 3 1 ps duration were generated at 154 MHZ repetition rate. FOR Q-switched mode-locking, the repetition rate and pulse duration of the Q-switched pulses were 133-300 kHz and 100-350 ns, respectively.
- 社団法人応用物理学会の論文
- 2002-11-01
著者
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Shen De-yuan
Division Of Microelectronics School Of Electrical And Electronic Engineering Nanyang Technological U
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Ueda K
Institute For Laser Science University Of Electro-communications
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Ueda Kentaro
Department Of Electronic Science And Engineering Kyoto University
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Ueda Kenichi
Institute For Laser Science University Of Electro-communications
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Ueda Kunihiro
Advanced Materials Research Department R & D Center Tdk Corporation
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Tang Ding-yuan
Division Of Microelectronics School Of Electrical And Electronic Engineering Nanyang Technological U
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Ueda Kenichi
Institute For Laser Science University Of Electro Communications
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