Damage Due to Nitrogen Molecular Ions of GaN Heteroepitaxial Layers Grown on Si(001)Substrates by Molecular Beam Epitaxy Assisted by EIectron Cyclotron Resonance

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-05-15

著者

• Ando Hironori

  Electric Engineering Osaka Institute Of Technology

• YODO Tokuo

  Electronic Engineering, Osaka Institute of Technology

• Yodo Tokuo

  Electric Engineering Osaka Institute Of Technology

• Harada Yoshinobu

  Applied Physics Osaka Institute Of Technology

• TSUCHIYA Hironori

  Electric Engineering, Osaka Institute of Technology

• Tsuchiya Hironori

  Electric Engineering Osaka Institute Of Technology

関連論文

• Anisotropic Strain Estimated from Lattice Parameters Measured by Bond Method Using X-Ray Diffraction, in Molecular Beam Epitaxy-grown GaAs/Si(001)
• Damage Due to Nitrogen Molecular Ions of GaN Heteroepitaxial Layers Grown on Si(001)Substrates by Molecular Beam Epitaxy Assisted by EIectron Cyclotron Resonance

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