Preparation of Tungsten Nitride on Alumina by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Tungsten nitride was synthesized on γ-alumina using a chemical vapor deposition method in a stream of WCl_6, NH_3, H_2, and Ar at temperatures of 773 to 973 K under 70Pa. The surface area of the W_2N/Al_2O_3 system decreased from 178 to 140m^2g^<-1> with increasing tungsten loading.The pore volume decreased with increasing deposition of W_2N with a constant distribution of pore size. The X-ray diffraction analysis showed the formation of β-W_2N (100) and (111) phases in the 4.9wt% W_2N/Al_2O_3 but not in the 1.2 and 3.3wt% W_2N/Al_2O_3. From the X-ray photoelectron Spectroscopy analysis, the N ls/W 4f atomic ratio increased from 1.3 to 1.6 for the 1.2 to 4.9wt% W_2N/Al_2O_3. W^0, W^<2+>and W^<4+> were dominant for the 4.9wt% W_2N/Al_2O_3.
- 社団法人応用物理学会の論文
- 2000-07-30
著者
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Hirano Naoya
Graduate School Of Bio-applications And Systems Engineering Tokyo University Of Agriculture And Tech
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NAGAI Masatoshi
Graduate School of Bio-Applications and Systems Engineering, Tpkyo University of Agriculture and Tec
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OMI Shinzo
Graduate School of Bio-Applications and Systems Engineering, Tpkyo University of Agriculture and Tec
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Omi Shinzo
Graduate School Of Bio-applications And Systems Engineering Tokyo University Of Agriculture And Tech
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Nagai Masatoshi
Graduate School Of Bio-applications And Systems Engineering Tokyo Univ. Of Agriculture And Technol.
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Nagai Masatoshi
Graduate School Of Bio-applications And Systems Engineering Tokyo University Of Agriculture And Tech
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Omi Shinzo
Graduate School Of Bio-applications And Systems Engineering Tokyo University Of Agriculture And Tech
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