Hydrogen Effect on Damage Structure of Si(100) Surface Studied by in Situ Raman Spectroscopy

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概要

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• In situ Raman measurements have been performed on a Si(100) surface under irradiation by low-energy H^+, D^+ and He^+. The intensity of the 520 cm^<-1> Raman peak of crystalline Si decreased almost linearly with the square root of displacement per atom (dpa), suggesting that the peak reduction originates from defect clusters but not single vacancies or interstitials. At a high dpa, the peak intensity became very low and broadened due to amorphization for all incident ions. In addition, the chemical effect of hydrogen was clearly observed, i.e., the reduction rate at low dpa was slightly enhanced by H^+ and D^+ irradiation as compared to that with He^+, whereas H^+ and D^+ decelerated the amorphization as compared to He^+. The initial damage enhancement is attributed to Si-H bond formation, whereas the later deceleration of the amorphization is attributed to the formation of H_2 molecules recovering Si-Si bonds.

• 社団法人応用物理学会の論文
• 2000-07-30

著者

• TANABE Tetsuo

  Center for Integrated Research in Science and Engineering, Nagoya University

• YOSHIDA Tomoko

  Center for Integrated Research in Science and Engineering, Nagoya University

• Tanabe Tetsuo

  Center For Integrated Research In Science And Engineering (cirse)

• Yoshida T

  Center For Integrated Research In Science And Engineering Nagoya University

• HARA Takanobu

  Department of Nuclear Engineering, Graduate School of Engineering, Nagoya University

• II Tatsuya

  Department of Nuclear Engineering, Graduate School of Engineering, Nagoya University

• Hara Takanobu

  Department Of Nuclear Engineering Graduate School Of Engineering Nagoya University

• Ii Tatsuya

  Department Of Nuclear Engineering Graduate School Of Engineering Nagoya University

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