Morphology Change of Octahedral Oxide Precipitates in Czochralski Silicon Wafers Stretched by Tension
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概要
- 論文の詳細を見る
Alterations in the morphology of thermally induced oxide precipitates have been studied by transmission electron microscopy in a Czochralski silicon wafer deformed by tension at 850℃ and 950℃. Precipitates with complex shapes are frequently observed in specimens deformed at 950℃. Some octahedral oxide precipitates are observed to expand at the vertices of the square shape in the plan view in a specimen heat-treated at 1050℃ for 8h after deformation at 950℃. Precipitates grow on residual dislocations around octahedral oxide precipitates. These observat ons suggest that a large number of vacancies form in the vicinity of octahedral oxide precipitates through interaction with bypassing dislocations.
- 社団法人応用物理学会の論文
- 2000-10-15
著者
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Sakai Kazufumi
National Defense Academy Department Of Mathematics And Physics
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OJIMA Kozo
National Defense Academy, Department of Mathematics and Physics
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SAKAI Kazufumi
National Defense Academy, Department of Mathematics and Physics
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Yamagami Takehisa
National Defense Academy, Department of Mathematics and Physics
関連論文
- Morphology Change of Octahedral Oxide Precipitates in Czochralski Silicon Wafers Stretched by Tension
- Detection Limit for Defect Density by Light Scattering Tomography