Doping Mechanisms of La, Y and Excess Oxygen in PbWO_4 : Electrical Properties of Condensed Matter
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-12-15
著者
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Feng X‐q
Shanghai Inst. Ceramic Chinese Acad. Sci. Shanghai Chn
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FENG Xi-Qi
Laboratory of Functional Inorganic Materials, Shanghai Institute of Ceramics
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LI Wen-Sheng
Physics Department, H.K. Baptist University
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TANG Tong
Physics Department, H.K. Baptist University
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HUANG Hong-Wei
Laboratory of Functional Inorganic Materials, Shanghai Institute of Ceramics
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Feng Xi-qi
Laboratory Of Functional Inorganic Materials Shanghai Institute Of Ceramics
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Tang T
Hong Kong Baptist Univ. Hon Kong
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Li Wen-sheng
Physics Department H.k. Baptist University:laboratory Of Functional Inorganic Materials Shanghai Ins
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Huang Hong-wei
Laboratory Of Functional Inorganic Materials Shanghai Institute Of Ceramics
関連論文
- Scintillation Characteristics and Radiation Damage of Ce-Doped Bi_4Si_3O_ Single Crystals
- Doping Mechanisms of La, Y and Excess Oxygen in PbWO_4 : Electrical Properties of Condensed Matter