Scintillation Characteristics and Radiation Damage of Ce-Doped Bi_4Si_3O_<12> Single Crystals
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-01
著者
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Nikl Martin
Institute of Physics AS CR
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Nikl Martin
Institute Of Physics
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Ishii Mitsuru
Shonan Institute Of Technology
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Senguttuvan Nichimuthu
Shonan Institute Of Technology
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HARADA Kenji
Shonan Institute of Technology
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KOBAYASHI Masaaki
High Energy Accelerator Research Organization
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NIKI Martin
Institute of Physics AS CR
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FENG Xi-Qi
Laboratory of Functional Inorganic Materials, Shanghai Institute of Ceramics
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Feng Xi-qi
Laboratory Of Functional Inorganic Materials Shanghai Institute Of Ceramics
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Senguttuvan Nachimuthu
Shonan Institute of Technology, Fujisawa 251-8511, Japan
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Senguttuvan Nachimuthu
Shonan Institute of Technology
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- Influence of Annealing on the Optical Properties of PbWO_4 Single Crystals Grown by the Bridgman Method
- Scintillation Characteristics and Radiation Damage of Ce-Doped Bi_4Si_3O_ Single Crystals
- Energy Transfer Phenomena in GdF_3 : Mn Co-doped with Ce^, Pr^ or Zr^
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