Qualitative discussion for the construction of oxidation layer on copper surface in the process of thermally oxidizing (国際セッション IS-EMD2005) -- (Contact Phenomena)

概要

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Contact resistance caused from a contact interface is associated by current constriction and also oxidized resistive film layer. On copper surface, thermally oxidization layer diffuse into the copper to construct insulation layer and semiconductor layer. From 10nm to 200nm thickness of oxide layers were made on the hot plate. Contact resistance in the process of oxidization shows an interesting phenomenon that it showed oscillatory increases and decreases. From our experimental results, it would be considered the reaction between Cu atom and oxygen is very slower than diffusing oxygen. Because, the copper sample is giant single crystal oriented in (100) direction and it has no boundary inside, therefore each bonding between copper atoms is so tight, it is not easy to make insulating layer of CuO, whereas it is easily to make semi-conducting layer of Cu_2O spreading inner the part. Insulating layer would exist only at the surface area.
社団法人電子情報通信学会の論文
2005-11-10