A New High Resolution Negative Electron Resist Chloromethylated Poly-α-Methylstyrene (αM-CMS)

スポンサーリンク

概要

• 論文の詳細を見る

• A new negative electron resist chloromethylated poly-α-methylstyrene (αM-CMS) was synthesized from nearly monodisperse poly-α-methylstyrene. αM-CMS has the highest contrast (γ=2.5-3.0) among the known negative polymer resists and has high sensitivity (3-33 μC/cm^2). Sufficient resolution for a 1 μm pattern fabrication process was demonstrated. Submicron patterns as small as 0.1 μm were obtained in 0.4 μm thick αM-CMS on a solid substrate, suggesting that the ultimate resolution of the resist is better than 0.1 μm. Excellent thermal stability and high dry-etching durability assure wide application of αM-CMS in electron beam lithography.

• 社団法人応用物理学会の論文
• 1981-08-05

著者

• Sukegawa Ken

  Polymer Section Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Co

• SUGAWARA Shungo

  Polymer Section, Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public

• Sugawara Shungo

  Polymer Section Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Co

関連論文

• A New High Resolution Negative Electron Resist Chloromethylated Poly-α-Methylstyrene (αM-CMS)
• Chloromethylated Polystyrene as Deep UV and X-Ray Resist

スポンサーリンク