Ion Implantation Masking Ability Degradation in High Temperature Annealed Mo Film

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概要

• 論文の詳細を見る

• Unwanted depletion modes have been observed in Mo-gate MOSFET characteristics, when high-temperature annealed Mo-gate film was used as a mask for As implantation into source and drain region, in sharp contrast to enhancement mode characteristics for FETs with as-depos-tied Mo-gate film. Donor-type impurity incorporation in Si substrate and fast interface states generation were derived from CV characteristics for diodes fabricated by the same process asused for depletion-mode FETs. The former is considered to be due to As incorporation in the Sisubstrate owing to channeling through annealed Mo film resulting from improved crystallinity, and the latter to some impurity contamination in the gate oxide film due to the As knock-on effect.

• 社団法人応用物理学会の論文
• 1981-06-05

著者

• Higuchi Kohei

  Basic Technology Research Laboratories Nippon Electric Co. Ltd.

• NOZAKI Tadatoshi

  Basic Technology Research Laboratories, Nippon Electric Co., Ltd.

• OKABAYASHI Hidekazu

  Basic Technology Research Laboratories, Nippon Electric Co., Ltd.

• Okabayashi Hidekazu

  Basic Technology Research Laboratories Nippon Electric Co. Lid.

• Nozaki Tadatoshi

  Basic Technology Research Laboratories Nippon Electric Co. Ltd.

関連論文

• Ion Implantation Masking Ability Degradation in High Temperature Annealed Mo Film
• Short-Channel MOSFETs Fabricated Using CW Nd: YAG Laser Annealing of As-Implanted Source and Drain

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