Short-Channel MOSFETs Fabricated Using CW Nd: YAG Laser Annealing of As-Implanted Source and Drain

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概要

• 論文の詳細を見る

• Short-channel MOSFETs have been fabricated using cw Nd: YAG laser annealing of As-implanted source and drain. The effective channel length measurement confirmed that the lateral spread of laser annealed source and drain regions was very small. The gain factor and the slope of subthreshold characteristics were much the same as those for furnace annealed devices. These results indicate that the SiO_2/Si interface properties were not adversely affected by laser annealing.

• 社団法人応用物理学会の論文
• 1981-11-05

著者

• Ishida Koichi

  Basic Technology Research Laboratories Nippon Electric Co. Lid.

• Okabayashi Hidekazu

  Basic Technology Research Laboratories Nippon Electric Co. Lid.

• YOSHIDA Masaaki

  Basic Technology Research Laboratories, Nippon Electric Co., Lid.

• Yoshida Masaaki

  Basic Technology Research Laboratories Nippon Electric Co. Lid.

関連論文

• Ion Implantation Masking Ability Degradation in High Temperature Annealed Mo Film
• Short-Channel MOSFETs Fabricated Using CW Nd: YAG Laser Annealing of As-Implanted Source and Drain

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