Effect of Mixing Hydrogen-Argon on Magnetron Sputtered SiO_2 Films

スポンサーリンク

概要

• 論文の詳細を見る

• Properties of magnetron sputtered SiO_2. films prepared in a 30% hydrogen-70% argon mixed gas have been investigated in comparision with those prepared in argon alone. The results obtained are: (1) The film prepared in argon alone has a remarkable dependence on sputtering pressure, and has a porous film structure with abnormal etching rate, at pressures other than the critical pressure. (2) By mixing hydrogen in the argon, the dependence on sputtering pressure is removed and the SiO_2 films are densified.

• 社団法人応用物理学会の論文
• 1981-02-05

著者

• Yachi Toshiaki

  Nippon Telegraph And Telephone Public Corporation Musashino Electrical Communication Laboratory

• SERIKAWA Tadashi

  Nippon Telegraph and Telephone Public Corp., Musashino Electrical Communication Laboratory

• Serikawa Tadashi

  Nippon Telegraph And Telephone Public Corporation Musashino Electrical Communication Laboratory

• Serikawa Tadashi

  Nippon Telegraph And Telephone Public Corp. Musashino Electrical Communication Laboratory

関連論文

• in situ Phosphorus-Doped Silicon Film Depositions by Magnetron Sputtering in Phosphorus Vapor
• Effect of Mixing Hydrogen-Argon on Magnetron Sputtered SiO_2 Films

スポンサーリンク