Preparation and Properties of a p-n Junction of Cd_<1.8>Zn_<1.2>As_2

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1975-01-05

著者

• Iwami Motohiro

  Denki-bussei Laboratory Department Of Electrical Engineering Osaka University

• Nakamura Masami

  Denki-bussei Laboratory Department Of Electrical Engineering Osaka University

• KAWABE Kazuo

  DENKI-BUSSEI Laboratory, Department of Electrical Engineering, Osaka University

• Kawabe Kazuo

  Denki-bussei Laboratory Department Of Electrical Engineering Osaka University

関連論文

• Preparation and Properties of a p-n Junction of Cd_Zn_As_2
• Composition Profile of Zn_3As_2-Cd_3As_2 Interface
• Two-Band and Impurity-Band Conduction in the Cd_Zn_xAs_2 Alloy Crystals
• Temperature Dependence of Index Matching Angle of the Second Harmonic Generation in KDP Crystal
• Infrared Optical Absorption in Cd_3As_2
• Growth of Crystals of Zn_3As_2 from Cd_3As_2
• Magnetoresistance Effect in p-Zn_3As_2 Single Crystals
• Negative Magnetoresistance in p-Zn_3As_2
• Preparation of BP Single Crystals from B-Ni-P Solution
• Solubility of Zn_3As_2 in Bi and LPE Growth of Zn_3As_2 on(Cd_xZn_)_3As_2 Substrate from Bi Solution

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