A Novel Amorphous-Silicon Field-Effect Transistor with Good Off-Characteristics : Semiconductors and Semiconductor Devices

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概要

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• This letter proposes a novel amorphous-silicon field-effect transistor whose local threshold voltage is distributed along the channel. A low off-current is the most important feature of the new device, while the on-current is as high as that of the conventional device. The superior off-characteristics of the novel device were verified experimentally.

• 社団法人応用物理学会の論文
• 1988-12-20

著者

• Matsumura Masakiyo

  Faculty Of Engineering Tokyo Institute Of Technology

• Uchida Yasutaka

  Faculty Of Engineering Takusyoku University

関連論文

• XeF Excimer-Laser Activation of Ion-Implanted Dopants in Hydrogenated Amorphous-Silicon Films
• A Novel Amorphous-Silicon Field-Effect Transistor with Good Off-Characteristics : Semiconductors and Semiconductor Devices

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