Quantitative Analysis of Semiconductor Materials with Secondary Ion Mass Spectrometer : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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Yoshii Shizuka
The Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Kawashima Izumi
The Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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OSHIMA Masaharu
The Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation
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Oshima Masaharu
The Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
関連論文
- Quantitative Analysis of Semiconductor Materials with Secondary Ion Mass Spectrometer : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- TEM, AES and XPS Studies of Si Layer on Buried SiO_2 Layer Formed by High-Dose Oxygen Ion-Implantation