TEM, AES and XPS Studies of Si Layer on Buried SiO_2 Layer Formed by High-Dose Oxygen Ion-Implantation

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概要

• 論文の詳細を見る

• Depth distributions of crystallographic and chemical properties in oxygen ion-implanted Si layers have been studied by TEM, AES and XPS. Oxygen ions (^<16>O^+) were implanted into (100)-Si wafers at 150 keV to a dose of 1.2×10^<18>/cm^2. The dose rate was about 15 μA/cm^2. The implanted oxygen forms a buried SiO_2 layer after annealing. The Si layer on this buried SiO_2 layer is not completely amorphized by implantation, and changes after annealing to a single crystal Si layer at the surface region and a deeper polycrystalline Si layer. A twin layer is formed at the interface region between these two layers. The polycrystalline Si layer consists of a mixture of Si and SiO_2.

• 社団法人応用物理学会の論文
• 1980-06-05

著者

• Maeyama Satoshi

  The Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

• Yoshii Shizuka

  The Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

• Hayashi Takayoshi

  The Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation

関連論文

• Quantitative Analysis of Semiconductor Materials with Secondary Ion Mass Spectrometer : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
• TEM, AES and XPS Studies of Si Layer on Buried SiO_2 Layer Formed by High-Dose Oxygen Ion-Implantation

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