Ultra-Low Resistance, Through-Wafer Via (TWV) Technology and Its Applications in Three Dimensional Structures on Silicon
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概要
- 論文の詳細を見る
This paper presents an ultra-low resistance, high wiring density, through-wafer via (TWV) technology that is compatible with standard silicon wafer processing. Vias as small as 30 μm by 30 μm are fabricated through a 525 μm thick wafer. This results in an aspect ratio for the via that is greater than 17:1. Furthermore, the dc resistance of a single via is less than 50 mΩ. Key fabrication steps, including the silicon dry etch, copper metallization, and photoresist electroplating, are described in detail. As a demonstration of the potential applications of the TWV technology, a novel three dimensional inductor is designed and fabricated. For a 0.9-nH inductor, a quality factor of 18.5 is measured at 800 MHz.
- 社団法人応用物理学会の論文
- 1999-04-30
著者
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Lee Thomas
E. L. Ginzton Laboratory And Center For Integrated Systems Stanford University
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Mccarthy Anthony
Lawrence Livermore National Laboratory
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Yue C.patrick
E. L. Ginzton Laboratory And Center For Integrated Systems Stanford University
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SOH Hyongsok
E. L. Ginzton Laboratory and Center for Integrated Systems, Stanford University
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RYU Changsup
E. L. Ginzton Laboratory and Center for Integrated Systems, Stanford University
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WONG S.Simon
E. L. Ginzton Laboratory and Center for Integrated Systems, Stanford University
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QUATE Calvin
E. L. Ginzton Laboratory and Center for Integrated Systems, Stanford University
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Ryu Changsup
E. L. Ginzton Laboratory And Center For Integrated Systems Stanford University
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Soh Hyongsok
E. L. Ginzton Laboratory And Center For Integrated Systems Stanford University
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Quate Calvin
E. L. Ginzton Laboratory And Center For Integrated Systems Stanford University
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Wong S.simon
E. L. Ginzton Laboratory And Center For Integrated Systems Stanford University
関連論文
- Ultra-Low Resistance, Through-Wafer Via (TWV) Technology and Its Applications in Three Dimensional Structures on Silicon
- Ultra-Low Ressitance, Through-Wafer Via (TWV) Technology and Its Applications in Three Dimensional Structures on Silicon